SiGe BiCMOS Technology for Communication Products
Ambito Racanelli and Paul Kempf
4321 Jamboree Rd, Newport cigarettes Beach, CALIFORNIA 92660
Email: marco. [email protected] com
SiGe BiCMOS technology is reviewed with focus on the latest
advances like the achievement of > two hundred GHz Ft and
Fmax SiGe transistors, integration with generic 0. 13 Вµm
CMOS, and the realization of low-cost nodes for the
integration of wireless transceivers.
wi-fi and wire-line circuit illustrations are also offered.
SiGe BiCMOS has become the technology of choice for
achieving cost effective integration in wireless and wireline interaction transceivers.
A number of SiGe BiCMOS
technology nodes exist today at commercial foundries
ranging in difficulty and performance from 0. thirty five to zero. 18 Вµm
geometry and from 60 to 200 GHz Ft (Figure 1).
substrate capacitance by nearly a factor of 4 for a minimum
size NPN but can be taken off to reduce wafer cost with out
impacting different device parameters.
Dans le cas ou BiCMOS
WIRELESS LOCAL AREA NETWORK
After formation of the CMOS wells, gateway, and extractor
sinker, a SiGe layer is lodged by utilization of a single wafer RTCVD aeroplano.
0. your five
Figure a couple of: Self-aligned SiGe NPN transistor with profound trench. Self-aligned transistors have got intrinsic and extrinsic bottom formed with a single patterning step resulting in a narrow and very well controlled hyperlink base and low base resistance.
. 18. 15. 13. 1
Number 1 . SiGe BiCMOS nodes mapped throughout major end markets. Plotted as illustrations are Jazz's SiGe60, SiGe90, SiGe120 and SiGe200 systems.
In this paper, we will review improvements in the performance of SiGe bipolar gadgets, the integration of these devices with
deep sub-micron CMOS, and advances inside the realization of
high quality passive elements. In the final portion of the
newspaper, we will certainly review optimized SiGe BiCMOS technology
nodes and talk about performance of benchmark brake lines.
High Performance SiGe Bipolar Transistors
Figure a couple of shows a cross-section of any state of the art SiGe
bipolar receptor. The receptor is built frist by forming the buried level through an pelisse and subsequent epitaxial
expansion. Shallow and deep trench isolation elements are then simply
built. Make use of deep trench is a choice that reduces collector-
Following, the emitter is formed. In state of the art technology, the emitter is self-aligned to the extrinsic base leading to low extrinsic base level of resistance, high Fmax, and low noise figure.
Figure 3 reveals the lab-created dependence of base level of resistance
at maximum Ft on base hyperlink width. Within a self-aligned unit, this dimension can be scaled aggressively ( 20V
Life time (Yrs)
0. 0 0 1
zero. 0 0 0 zero 1
zero. 0 zero 0 0 0 0 1
Figure several. 2 fF/Вµm2 MIM capacitor constant stress lifetime. A lifetime of > 1000 years is extrapolated for operation at 5V.
Table you: Sample of optimized SiGe BiCMOS technology variants
1 ) E+06
3 um Top Metal
6 1 Top Material
H tre t s Sixth is v o lta g elizabeth (V )
1 . E+05
T op Metal
1 ) E+04
1 ) E+03
Figure 6. Inductor area as being a function of inductance for a 4-turn inductor with maximum Q of 10 built in 3 Вµm and 6th Вµm leading metal correspondingly.
Capacitors also take up significant amount of pass away area and
focus has been toward raising their density. 2 fF/Вµm2
capacitors are now introduced into production. By
stacking a couple of fF/Вµm2 capacitors higher capacitance density can be achieved. Figure 7 displays reliability data for a 2 fF/Вµm2 MIM capacitor which is capable of 5V procedure and includes a
breakdown voltage of > 20V.
Technology nodes and...
References: Dec. 1999.
(4) Pingxi Mum, 2003 RFIC Symposium, in press.