01.08.2019
 Essay regarding Student

SiGe BiCMOS Technology for Communication Products

Ambito Racanelli and Paul Kempf

Jazz Semiconductor

4321 Jamboree Rd, Newport cigarettes Beach, CALIFORNIA 92660

Email: marco. [email protected] com

Subjective

SiGe BiCMOS technology is reviewed with focus on the latest

advances like the achievement of > two hundred GHz Ft and

Fmax SiGe transistors, integration with generic 0. 13 Вµm

CMOS, and the realization of low-cost nodes for the

integration of wireless transceivers.

Record-breaking

wi-fi and wire-line circuit illustrations are also offered.

Introduction

SiGe BiCMOS has become the technology of choice for

achieving cost effective integration in wireless and wireline interaction transceivers.

A number of SiGe BiCMOS

technology nodes exist today at commercial foundries

ranging in difficulty and performance from 0. thirty five to zero. 18 Вµm

geometry and from 60 to 200 GHz Ft (Figure 1).

substrate capacitance by nearly a factor of 4 for a minimum

size NPN but can be taken off to reduce wafer cost with out

impacting different device parameters.

Base

Emitter

Collector

Smothered

Layer

Extrinsic

Base

Innate

SiGe Foundation

Link Foundation

Deep

Deep Trench

SiGe200

200

Foot (GHz)

SiGe120

100

80

60

forty

20

10G

SiGe90

SiGe60

SiGe BiCMOS

40G

Dans le cas ou BiCMOS

Si CMOS

WIRELESS LOCAL AREA NETWORK

After formation of the CMOS wells, gateway, and extractor

sinker, a SiGe layer is lodged by utilization of a single wafer RTCVD aeroplano.

CDMA

GSM

0. your five

Figure a couple of: Self-aligned SiGe NPN transistor with profound trench. Self-aligned transistors have got intrinsic and extrinsic bottom formed with a single patterning step resulting in a narrow and very well controlled hyperlink base and low base resistance.

. thirty-five

. 25

. 18. 15. 13. 1

Technology (Вµm)

Number 1 . SiGe BiCMOS nodes mapped throughout major end markets. Plotted as illustrations are Jazz's SiGe60, SiGe90, SiGe120 and SiGe200 systems.

In this paper, we will review improvements in the performance of SiGe bipolar gadgets, the integration of these devices with

deep sub-micron CMOS, and advances inside the realization of

high quality passive elements. In the final portion of the

newspaper, we will certainly review optimized SiGe BiCMOS technology

nodes and talk about performance of benchmark brake lines.

High Performance SiGe Bipolar Transistors

Figure a couple of shows a cross-section of any state of the art SiGe

bipolar receptor. The receptor is built frist by forming the buried level through an pelisse and subsequent epitaxial

expansion. Shallow and deep trench isolation elements are then simply

built. Make use of deep trench is a choice that reduces collector-

Following, the emitter is formed. In state of the art technology, the emitter is self-aligned to the extrinsic base leading to low extrinsic base level of resistance, high Fmax, and low noise figure.

Figure 3 reveals the lab-created dependence of base level of resistance

at maximum Ft on base hyperlink width. Within a self-aligned unit, this dimension can be scaled aggressively ( 20V

Life time (Yrs)

multitude of

10

zero. 1

0. 0 0 1

zero. 0 0 0 zero 1

zero. 0 zero 0 0 0 0 1

zero

5

12

20

twenty-five

Figure several. 2 fF/Вµm2 MIM capacitor constant stress lifetime. A lifetime of > 1000 years is extrapolated for operation at 5V.

Table you: Sample of optimized SiGe BiCMOS technology variants

1 ) E+06

3 um Top Metal

NPN

6 1 Top Material

Area (um2)

15

H tre t s Sixth is v o lta g elizabeth (V )

1 . E+05

CMOS

Resistors

Capacitor

Course-plotting

T op Metal

1 ) E+04

1 ) E+03

0

2

4

6

almost 8

10

Inductance (nH)

Figure 6. Inductor area as being a function of inductance for a 4-turn inductor with maximum Q of 10 built in 3 Вµm and 6th Вµm leading metal correspondingly.

Capacitors also take up significant amount of pass away area and

focus has been toward raising their density. 2 fF/Вµm2

capacitors are now introduced into production. By

stacking a couple of fF/Вµm2 capacitors higher capacitance density can be achieved. Figure 7 displays reliability data for a 2 fF/Вµm2 MIM capacitor which is capable of 5V procedure and includes a

breakdown voltage of > 20V.

Technology nodes and...

References: Dec. 1999.

(4) Pingxi Mum, 2003 RFIC Symposium, in press.